Micron Improves NAND Technology with 232-Stored QLC

Translate from : Micron Forbedrer NAND Teknologi med 232-Lagret QLC
Micron Technology has reached a milestone in NAND technology with the mass production of 232-layer QLC NAND, now in select Crucial SSDs. This technological advancement is designed to increase performance in several storage applications.

This advancement is also reaching enterprise customers through volume production and is being trialled by OEM PC manufacturers as part of the Micron 2500 NVMe SSD lineup. The new 232-layer QLC NAND from Micron is designed to improve performance in multiple storage applications, including mobile devices, client computers and data centers.

This technology shows remarkable improvements in efficiency and speed and has industry-leading bit density. This achieves a reduction in size of 28% compared to the latest offerings from closest competitors. It also delivers a remarkable increase in NAND I/O speeds, reaching 2400 MT/s, a 50% improvement over previous models.

New Micron NAND Flash.jpg

In addition, this technology offers a 24% improvement in reading speed and a 31% increase in programming performance compared to its predecessors. Bill Cerreta, general manager of Hyperscale at Pure Storage, highlighted the impact of Micron's 232-layer QLC NAND, saying it plays a critical role in supporting Pure Storage's goal of removing HDDs from data centers by 2028.

There are three form factors: M.2 2280/2242/2230 and three capacity models: 512GB, 1TB and 2TB. Transfer speeds vary depending on capacity; The 2TB model has sequential read 7,100MB/sec, write 6,000MB/sec, random read 1,000,000 IOPS and write 1,000,000 IOPS. And the 1TB model has 7,100MB/sec., 5,800MB/sec. and 900,000 IOPS for writing. IOPS, 1,000,000 IOPS. The 512GB model is 6,600MB/sec, 3,650MB/sec, 530,000 IOPS and 860,000 IOPS for writing. The bus interface is PCI Express 4.0(x4)/NVMe 1.4c, the total write volume is 600TBW for 2TB, 300TBW for 1TB, 200TBW for 512GB, and the MTTF is 2 million hours.

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